Infineon IPT N-Channel MOSFET, 8 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60T065S7XTMA1
- RS庫存編號:
- 349-262
- 製造零件編號:
- IPT60T065S7XTMA1
- 製造商:
- Infineon
可享批量折扣
查看批量定價選項小計（1 包，共 2 件）*
HK$110.20
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 18 | HK$55.10 | HK$110.20 |
| 20 - 198 | HK$49.60 | HK$99.20 |
| 200 - 998 | HK$45.70 | HK$91.40 |
| 1000 - 1998 | HK$42.40 | HK$84.80 |
| 2000 + | HK$38.10 | HK$76.20 |
* 參考價格
- RS庫存編號:
- 349-262
- 製造零件編號:
- IPT60T065S7XTMA1
- 製造商:
- Infineon
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PG-HSOF-8 | |
| Series | IPT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 820mV | |
| Maximum Power Dissipation Pd | 167W | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC for Industrial Applications | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PG-HSOF-8 | ||
Series IPT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 820mV | ||
Maximum Power Dissipation Pd 167W | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC for Industrial Applications | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolMOS S7 boasts the lowest Rdson values for an HV SJ MOSFET, with a distinctive increase in energy efficiency. The embedded Temperature sensor increases junction temperature sensing accuracy and robustness while keeping an easy and seamless implementation. CoolMOS S7 is optimized for static switching and high current applications. It is an ideal fit for solid-state relay, circuit breaker designs, and line rectification in SMPS and inverter topologies. The new temperature sensor enhances S7 features, allowing the best possible utilization of the power transistor.
CoolMOS S7 technology enables lowest RDS(on) in the smallest footprint
Optimized price performance in low frequency switching applications
High pulse current capability
Seamless diagnostics at the lowest system
Temperature sense feature for protection and optimized thermal device utilization
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