Infineon OptiMOS-TM6 N-Channel MOSFET, 39 A, 200 V Enhancement, 3-Pin PG-TO263-3 IPB339N20NM6ATMA1
- RS庫存編號:
- 349-401
- 製造零件編號:
- IPB339N20NM6ATMA1
- 製造商:
- Infineon
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HK$180.70
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單位 | 每單位 | 每包* | 節省 |
|---|---|---|---|
| 5 - 45 | HK$36.14 | HK$180.70 | - |
| 50 - 95 | HK$34.34 | HK$171.70 | HK$90.00 |
| 100 + | HK$31.82 | HK$159.10 | HK$432.00 |
* 參考價格
- RS庫存編號:
- 349-401
- 製造零件編號:
- IPB339N20NM6ATMA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 39A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | PG-TO263-3 | |
| Series | OptiMOS-TM6 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 33.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 15.9nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 39A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type PG-TO263-3 | ||
Series OptiMOS-TM6 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 33.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 15.9nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 Power Transistor, 200 V is an N-channel, normal level MOSFET designed for high efficiency power applications. It offers very low on resistance (RDS(on)), ensuring minimal conduction losses. With an excellent gate charge x RDS(on) product (FOM), it delivers superior switching performance. This MOSFET also features very low reverse recovery charge (Qrr), enhancing overall efficiency.
Pb free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
相关链接
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