Infineon OptiMOS N-Channel MOSFET, 143 A, 30 V Enhancement, 3-Pin PG-TO252-3 IPD020N03LF2SATMA1

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HK$164.10

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10 - 90HK$16.41HK$164.10
100 - 240HK$15.59HK$155.90
250 +HK$14.45HK$144.50

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RS庫存編號:
349-426
製造零件編號:
IPD020N03LF2SATMA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

143A

Maximum Drain Source Voltage Vds

30V

Series

OptiMOS

Package Type

PG-TO252-3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.05mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

136W

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

33nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, IEC61249-2-21, DIN IEC 68-1: 55/175/56

Automotive Standard

No

COO (Country of Origin):
CN
The Infineon StrongIRFET 2 power MOSFET 30 V technology features a best in class RDS(on) of 2 mOhm in a DPAK package. This product addresses a broad range of applications from low to high switching frequency.

General purpose products

Excellent robustness

Broad availability at distributors

Standard packages and pin out

High manufacturing and supply standards

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