Infineon OptiMOS N-Channel MOSFET, 137 A, 30 V Enhancement, 3-Pin PG-TO252-3 IPD023N03LF2SATMA1

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小計(1 包,共 10 件)*

HK$153.40

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每單位
每包*
10 - 90HK$15.34HK$153.40
100 - 240HK$14.56HK$145.60
250 - 490HK$13.49HK$134.90
500 - 990HK$12.42HK$124.20
1000 +HK$11.96HK$119.60

* 參考價格

RS庫存編號:
349-427
製造零件編號:
IPD023N03LF2SATMA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

137A

Maximum Drain Source Voltage Vds

30V

Package Type

PG-TO252-3

Series

OptiMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.35mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

107W

Typical Gate Charge Qg @ Vgs

39nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

175°C

Standards/Approvals

DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Infineon StrongIRFET 2 power MOSFET 30 V technology features a best in class RDS(on) of 2.3 mOhm in a DPAK package. This product addresses a broad range of applications from low to high switching frequency.

General purpose products

Excellent robustness

Broad availability at distributors

Standard packages and pin out

High manufacturing and supply standards

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