Infineon OptiMOS N-Channel MOSFET, 99 A, 30 V Enhancement, 3-Pin PG-TO252-3 IPD030N03LF2SATMA1

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小計(1 包,共 10 件)*

HK$134.60

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單位
每單位
每包*
10 - 90HK$13.46HK$134.60
100 - 240HK$12.80HK$128.00
250 - 490HK$11.84HK$118.40
500 - 990HK$10.91HK$109.10
1000 +HK$10.48HK$104.80

* 參考價格

RS庫存編號:
349-429
製造零件編號:
IPD030N03LF2SATMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

99A

Maximum Drain Source Voltage Vds

30V

Series

OptiMOS

Package Type

PG-TO252-3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.05mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

83W

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

16nC

Maximum Operating Temperature

175°C

Standards/Approvals

IEC61249-2-21, DIN IEC 68-1: 55/175/56, RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Infineon StrongIRFET 2 power MOSFET 30 V technology features a best in class RDS(on) of 3 mOhm in a DPAK package. This product addresses a broad range of applications from low to high switching frequency.

General purpose products

Excellent robustness

Broad availability at distributors

Standard packages and pin out

High manufacturing and supply standards

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