Infineon IGT65 Type N-Channel MOSFET, 38 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IGT65R045D2ATMA1
- RS庫存編號:
- 351-968
- 製造零件編號:
- IGT65R045D2ATMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 件）*
HK$86.50
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單位 | 每單位 |
|---|---|
| 1 - 9 | HK$86.50 |
| 10 - 99 | HK$77.90 |
| 100 - 499 | HK$71.80 |
| 500 - 999 | HK$66.60 |
| 1000 + | HK$59.70 |
* 參考價格
- RS庫存編號:
- 351-968
- 製造零件編號:
- IGT65R045D2ATMA1
- 製造商:
- Infineon
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | IGT65 | |
| Package Type | PG-HSOF-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.054Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Maximum Power Dissipation Pd | 131W | |
| Typical Gate Charge Qg @ Vgs | 6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series IGT65 | ||
Package Type PG-HSOF-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.054Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Maximum Power Dissipation Pd 131W | ||
Typical Gate Charge Qg @ Vgs 6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolGaN is a highly efficient gallium nitride (GaN) transistor designed for power conversion. It enables higher power density, supports reduced system BOM cost, and facilitates miniaturized form factors. Produced using wafer technology and fully automated production lines, it features narrow production tolerances and the highest product quality. This makes it suitable for a wide range of applications, from consumer electronics to industrial applications.
Enhancement mode transistor
Ultra fast switching
No reverse recovery charge
Capable of reverse conduction
Low gate and output charge
Superior commutation ruggedness
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