STMicroelectronics N-Channel STO60 Type N-Channel MOSFET, 55 A, 600 V, 8-Pin TO-LL STO60N045DM9
- RS庫存編號:
- 358-979
- 製造零件編號:
- STO60N045DM9
- 製造商:
- STMicroelectronics
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HK$81.10
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單位 | 每單位 |
|---|---|
| 1 - 9 | HK$81.10 |
| 10 - 99 | HK$72.90 |
| 100 - 499 | HK$67.30 |
| 500 - 999 | HK$62.40 |
| 1000 + | HK$56.00 |
* 參考價格
- RS庫存編號:
- 358-979
- 製造零件編號:
- STO60N045DM9
- 製造商:
- STMicroelectronics
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Output Power | 255W | |
| Package Type | TO-LL | |
| Series | STO60 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | N-Channel | |
| Height | 2.4mm | |
| Standards/Approvals | RoHS | |
| Length | 11.88mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 600V | ||
Output Power 255W | ||
Package Type TO-LL | ||
Series STO60 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration N-Channel | ||
Height 2.4mm | ||
Standards/Approvals RoHS | ||
Length 11.88mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The STMicroelectronics N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs. The silicon-based DM9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The diode featuring very low recovery charge (Qrr), time (trr) and RDS(on) makes this fast-switching super-junction Power MOSFET tailored for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast recovery body diode
Very low FOM
Low input capacitance and resistance
100 percent avalanche tested
Extremely high dv by dt ruggedness
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