Microchip TN0106 N-Channel Single MOSFETs, 3.4 A, 60 V Enhancement, 3-Pin TO-92 TN0106N3-G
- RS庫存編號:
- 598-395
- 製造零件編號:
- TN0106N3-G
- 製造商:
- Microchip
小計（1 袋，共 1000 件）*
HK$8,104.00
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年4月27日 發貨
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單位 | 每單位 | 每袋* |
|---|---|---|
| 1000 + | HK$8.104 | HK$8,104.00 |
* 參考價格
- RS庫存編號:
- 598-395
- 製造零件編號:
- TN0106N3-G
- 製造商:
- Microchip
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Microchip | |
| Product Type | Single MOSFETs | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 3.4A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-92 | |
| Series | TN0106 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Operating Temperature | 150°C | |
| Width | 0.165in | |
| Standards/Approvals | RoHS | |
| Length | 0.205in | |
| Height | 0.82in | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Microchip | ||
Product Type Single MOSFETs | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 3.4A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-92 | ||
Series TN0106 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Operating Temperature 150°C | ||
Width 0.165in | ||
Standards/Approvals RoHS | ||
Length 0.205in | ||
Height 0.82in | ||
Automotive Standard No | ||
The Microchip N Channel Enhancement-Mode Vertical low-threshold transistor is built using a vertical DMOS structure and a well-established silicon-gate manufacturing process. This design combines the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. Like all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
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