Microchip DN2470 N-Channel RF MOSFET, 170 mA, 700 V Depletion, 3-Pin TO-252 DN2470K4-G
- RS庫存編號:
- 598-941
- 製造零件編號:
- DN2470K4-G
- 製造商:
- Microchip
小計（1 卷，共 2000 件）*
HK$17,858.00
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年5月12日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2000 + | HK$8.929 | HK$17,858.00 |
* 參考價格
- RS庫存編號:
- 598-941
- 製造零件編號:
- DN2470K4-G
- 製造商:
- Microchip
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Microchip | |
| Product Type | RF MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 170mA | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-252 | |
| Series | DN2470 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 0.265in | |
| Length | 0.245in | |
| Standards/Approvals | RoHS-compliant | |
| Height | 0.94in | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Microchip | ||
Product Type RF MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 170mA | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-252 | ||
Series DN2470 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 0.265in | ||
Length 0.245in | ||
Standards/Approvals RoHS-compliant | ||
Height 0.94in | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Microchip Low threshold depletion-mode transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FET is ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
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