STMicroelectronics Sixpack Topology M2P45M12W2 6 N-Channel MOSFET Arrays, 30 A, 1.2 kV Enhancement, 32-Pin ACEPACK

享受批量購買折扣

額外添加5件可節省2%

查看批量定價選項

小計(1 件)*

HK$716.70

Add to Basket
選擇或輸入數量
库存信息目前无法访问 - 请稍候查看

單位
每單位
節省
1 - 4HK$716.70-
5 +HK$695.202%

* 參考價格

RS庫存編號:
640-673
製造零件編號:
M2P45M12W2-1LA
製造商:
STMicroelectronics
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

STMicroelectronics

Channel Type

N

Product Type

MOSFET Arrays

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

1.2kV

Package Type

ACEPACK DMT-32

Series

M2P45M12W2

Mount Type

Through Hole

Pin Count

32

Maximum Drain Source Resistance Rds

60.5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

22V

Forward Voltage Vf

2.5V

Typical Gate Charge Qg @ Vgs

100nC

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Transistor Configuration

Sixpack Topology

Height

5.9mm

Length

44.5mm

Width

27.9mm

Standards/Approvals

AQG 324, Automotive‐grade

Number of Elements per Chip

6

Automotive Standard

AQG 324

COO (Country of Origin):
CN
The STMicroelectronics automotive-grade power module housed in the ACEPACK DMT-32 package. It implements a sixpack topology using second-generation silicon carbide (SiC) MOSFETs, optimized for the DC/DC converter stage in on-board chargers (OBCs) for hybrid and electric vehicles. Designed for high-efficiency and high-frequency switching, it integrates an NTC thermistor for temperature monitoring and features an aluminum nitride (AlN) insulated substrate for superior thermal performance.

1200 V blocking voltage for high-voltage applications

Typical RDS(on) of 47.5 mΩ for reduced conduction losses

Maximum junction temperature of 175 °C for thermal robustness

DBC Cu-AlN-Cu substrate for efficient heat dissipation

3 kV isolation voltage for enhanced safety

Integrated NTC sensor for real-time thermal feedback

相关链接