製造零件編號

ROHM R4P Type N-Channel Single MOSFETs, 60 V Enhancement, 3-Pin MPT3 R4P020N06HZGT100

RS庫存編號:: 646-554
製造零件編號:: R4P020N06HZGT100
製造商:: ROHM

ROHM R4P Type N-Channel Single MOSFETs, 60 V Enhancement, 3-Pin MPT3 R4P020N06HZGT100

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可享批量折扣

小計（1 組，共 10 件）*

HK$31.10

訂單超過 HK$250.00 免費送貨

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單位	每單位	每膠帶*
10 - 90	HK$3.11	HK$31.10
100 - 240	HK$2.74	HK$27.40
250 - 990	HK$2.46	HK$24.60
1000 - 4990	HK$2.39	HK$23.90
5000 +	HK$2.32	HK$23.20

* 參考價格

RS庫存編號:: 646-554
製造零件編號:: R4P020N06HZGT100
製造商:: ROHM

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	ROHM
	Channel Type	Type N
	Product Type	Single MOSFETs
	Maximum Drain Source Voltage Vds	60V
	Package Type	MPT3
	Series	R4P
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	200mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	±20 V
	Typical Gate Charge Qg @ Vgs	7nC
	Maximum Power Dissipation Pd	0.5W
	Maximum Operating Temperature	150°C
	Height	1.6mm
	Standards/Approvals	RoHS
	Length	4.30mm
	Width	4.70 mm
	Automotive Standard	AEC-Q101

	選取全部
	品牌 ROHM
	Channel Type Type N
	Product Type Single MOSFETs
	Maximum Drain Source Voltage Vds 60V
	Package Type MPT3
	Series R4P
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 200mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs ±20 V
	Typical Gate Charge Qg @ Vgs 7nC
	Maximum Power Dissipation Pd 0.5W
	Maximum Operating Temperature 150°C
	Height 1.6mm
	Standards/Approvals RoHS
	Length 4.30mm
	Width 4.70 mm
	Automotive Standard AEC-Q101

Datasheet - R4P020N06HZGT100

The ROHM 4 volt drive N channel metal oxide semiconductor field effect transistor features low on resistance and supports 4 volt drive operation.

AEC-Q101 Qualified

ROHM R4P Type N-Channel Single MOSFETs, 60 V Enhancement, 3-Pin MPT3 R4P020N06HZGT100

訂單超過 HK$250.00 免費送貨

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