Vishay EF Type N-Channel Single MOSFETs, 31 A, 600 V Enhancement, 8-Pin PowerPAK
- RS庫存編號:
- 653-082
- 製造零件編號:
- SIHR120N60EF-T1GE3
- 製造商:
- Vishay
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小計（1 組，共 1 件）*
HK$44.60
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|---|---|
| 1 - 9 | HK$44.60 |
| 10 - 49 | HK$43.30 |
| 50 - 99 | HK$41.90 |
| 100 + | HK$36.10 |
* 參考價格
- RS庫存編號:
- 653-082
- 製造零件編號:
- SIHR120N60EF-T1GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PowerPAK | |
| Series | EF | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.125Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Power Dissipation Pd | 278W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PowerPAK | ||
Series EF | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.125Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Power Dissipation Pd 278W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay 4th generation E Series Power MOSFET featuring a fast body diode for improved switching efficiency. It delivers a low figure of merit (FOM), reduced effective capacitance, and minimized switching and conduction losses. Housed in a PowerPAK 8x8LR package, it's Ideal for server, telecom, lighting, industrial, and solar power applications.
Pb Free
Halogen free
RoHS compliant
相关链接
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