Vishay SIS5712DN Type N-Channel Single MOSFETs, 18 A, 150 V Enhancement, 8-Pin PowerPAK
- RS庫存編號:
- 653-113
- 製造零件編號:
- SIS5712DN-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計(1 組,共 1 件)*
HK$8.50
訂單超過 HK$250.00 免費送貨
有庫存
- 加上 6,000 件從 2026年8月17日 起發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
膠帶 | 每膠帶 |
|---|---|
| 1 - 24 | HK$8.50 |
| 25 - 99 | HK$8.30 |
| 100 - 499 | HK$8.20 |
| 500 - 999 | HK$6.80 |
| 1000 + | HK$6.50 |
* 參考價格
- RS庫存編號:
- 653-113
- 製造零件編號:
- SIS5712DN-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PowerPAK | |
| Series | SIS5712DN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0555Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 39.1W | |
| Typical Gate Charge Qg @ Vgs | 5.8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.04mm | |
| Standards/Approvals | Lead (Pb)-Free | |
| Width | 3.30mm | |
| Length | 3.30mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PowerPAK | ||
Series SIS5712DN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0555Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 39.1W | ||
Typical Gate Charge Qg @ Vgs 5.8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.04mm | ||
Standards/Approvals Lead (Pb)-Free | ||
Width 3.30mm | ||
Length 3.30mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay SIS5712DN Series Single MOSFETs, 150V Maximum Drain Source Voltage, 18A Maximum Continuous Drain Current - SIS5712DN-T1-GE3
This single MOSFET device is a surface-mount N-channel transistor intended for high-voltage switching and power-management roles in industrial electronics. It operates over a wide thermal range suitable for demanding environments and is provided in a compact PowerPAK package for space-conscious board layouts. The device is lead-free and offers enhancement-mode switching performance for conventional gate-driven applications.
Features and Benefits:
• 150V drain tolerance enables high-voltage switching
• 18A continuous drain current supports heavy loads
• 0.0555Ω Rds(on) reduces conduction losses
• 39.1W power dissipation permits high-power handling
• 5.8nC gate charge allows fast gate transitions
• 20V gate rating ensures robust gate-drive headroom
• 18A continuous drain current supports heavy loads
• 0.0555Ω Rds(on) reduces conduction losses
• 39.1W power dissipation permits high-power handling
• 5.8nC gate charge allows fast gate transitions
• 20V gate rating ensures robust gate-drive headroom
Applications
• Suitable for industrial motor-drive stages
• Used for switch-mode power supply primary switches
• Ideal for server and telecom power distribution
• Can be used for battery management and converters
• Used with high-voltage lighting and inverter circuits
• Used for switch-mode power supply primary switches
• Ideal for server and telecom power distribution
• Can be used for battery management and converters
• Used with high-voltage lighting and inverter circuits
What thermal range can it withstand during operation?
It is rated to function from -55°C up to 150°C, accommodating extreme ambient and junction temperatures.
How does the gate specification affect driver selection?
The 20V maximum gate-source rating defines the maximum permissible gate-drive amplitude and informs driver voltage margins to avoid overstress.
What electrical characteristic governs switching losses during transitions?
The typical gate charge of 5.8nC influences the required drive energy and switching speed, affecting switching-loss calculations.
How does the device package assist PCB assembly?
The PowerPAK surface-mount format supports automated placement and soldering while enabling efficient thermal coupling to the PCB copper.
相关链接
- Vishay SIS5712DN Type N-Channel Single MOSFETs 150 V Enhancement, 8-Pin PowerPAK SIS5712DN-T1-GE3
- Vishay SIR5712DP Type N-Channel Single MOSFETs 150 V Enhancement, 8-Pin PowerPAK
- Vishay SIR5712DP Type N-Channel Single MOSFETs 150 V Enhancement, 8-Pin PowerPAK SIR5712DP-T1-GE3
- Vishay SUM50010EL Type N-Channel Single MOSFETs 60 V Enhancement, 3-Pin PowerPAK
- Vishay SIB4122DK Type N-Channel Single MOSFETs 100 V Enhancement, 7-Pin PowerPAK
- Vishay SIRA10DDP Type N-Channel Single MOSFETs 30 V Enhancement, 8-Pin PowerPAK
- Vishay SIR4406DP Type N-Channel Single MOSFETs 40 V Enhancement, 8-Pin PowerPAK
- Vishay SIJ4406DP Type N-Channel Single MOSFETs 40 V Enhancement, 4-Pin PowerPAK
