Vishay SISS5812DN Type N-Channel Single MOSFETs, 42.8 A, 80 V Enhancement, 8-Pin PowerPAK
- RS庫存編號:
- 653-133
- 製造零件編號:
- SISS5812DN-T1-GE3
- 製造商:
- Vishay
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* 參考價格
- RS庫存編號:
- 653-133
- 製造零件編號:
- SISS5812DN-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 42.8A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK | |
| Series | SISS5812DN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0135Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 44.6W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.40mm | |
| Standards/Approvals | No | |
| Height | 0.83mm | |
| Width | 3.40 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 42.8A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK | ||
Series SISS5812DN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0135Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 44.6W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Length 3.40mm | ||
Standards/Approvals No | ||
Height 0.83mm | ||
Width 3.40 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay TrenchFET Gen V N-Channel Power MOSFET rated for 80 V drain-source voltage. Packaged in a Compact PowerPAK 1212-8S, it's Ideal for AI server power solutions, DC/DC converters, and load switching.
Pb Free
Halogen free
RoHS compliant
相关链接
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