Vishay EF Type N-Channel Single MOSFETs, 21 A, 600 V Enhancement, 3-Pin TO-263

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣

小計(1 件)*

HK$25.40

Add to Basket
選擇或輸入數量
库存信息目前无法访问 - 请稍候查看
單位
每單位
1 - 9HK$25.40
10 +HK$24.60

* 參考價格

RS庫存編號:
653-176
製造零件編號:
SIHB155N60EF-GE3
製造商:
Vishay
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Vishay

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

600V

Series

EF

Package Type

TO-263

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.159Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

179W

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

±30 V

Typical Gate Charge Qg @ Vgs

25nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

9.65 mm

Length

2.79mm

Automotive Standard

No

The Vishay 4th generation E Series Power MOSFET featuring a fast body diode for enhanced switching performance. It offers a low figure of merit (FOM), reduced effective capacitance, and optimized thermal behaviour. Designed for server, telecom, SMPS, and power factor correction supplies, it delivers reliable efficiency in demanding power applications.

Pb Free

Halogen free

RoHS compliant

相关链接