ROHM AG087FGD3HRB N-Channel Single MOSFETs, 40 A, -40 V Enhancement, 3-Pin TO-252 (TL) AG087FGD3HRBTL
- RS庫存編號:
- 687-378
- 製造零件編號:
- AG087FGD3HRBTL
- 製造商:
- ROHM
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HK$15.30
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單位 | 每單位 | 每膠帶* |
|---|---|---|
| 2 - 18 | HK$7.65 | HK$15.30 |
| 20 - 48 | HK$6.75 | HK$13.50 |
| 50 - 198 | HK$6.10 | HK$12.20 |
| 200 - 998 | HK$5.85 | HK$11.70 |
| 1000 + | HK$5.70 | HK$11.40 |
* 參考價格
- RS庫存編號:
- 687-378
- 製造零件編號:
- AG087FGD3HRBTL
- 製造商:
- ROHM
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Channel Type | N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Series | AG087FGD3HRB | |
| Package Type | TO-252 (TL) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.0mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 53W | |
| Typical Gate Charge Qg @ Vgs | 14.9nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.5mm | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Height | 2.3mm | |
| Width | 6.8mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Channel Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds -40V | ||
Series AG087FGD3HRB | ||
Package Type TO-252 (TL) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.0mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 53W | ||
Typical Gate Charge Qg @ Vgs 14.9nC | ||
Maximum Operating Temperature 175°C | ||
Length 10.5mm | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Height 2.3mm | ||
Width 6.8mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM Power MOSFET designed for automotive and industrial applications. This versatile component operates at a maximal drain-source voltage of 40V, enabling efficient control in power management systems. Built with advanced technology, it boasts a low on-state resistance of 7.0 mΩ, optimising power efficiency and thermal performance. AEC-Q101 qualified, this MOSFET is reliable even in rigorous automotive environments, making it a sound choice for engineers seeking durable solutions. Its robust thermal resistance and avalanched tested design ensure exceptional reliability under varied operating conditions, cementing its status as a go-to option for high-current applications.
Continuous drain current rated at ±40A, providing reliable performance in demanding scenarios
Breakdown voltage of 40V ensuring robust protection against over-voltage conditions
Low gate threshold voltage of 1.0V to 2.5V facilitating smoother operation and control
Compliant with AEC Q101 , highlighting its suitability for automotive applications
Exceptional thermal resistance of 2.80℃/W, enhancing heat dissipation and lifespan
100% avalanche tested, providing peace of mind in high-stress environments
Features a DPAK package, optimising footprint while supporting effective thermal management
Suitable for high efficiency designs in automotive and other high-current applications
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