ROHM RQ3P120BKFRA Type N-Channel Single MOSFETs, 100 V Enhancement, 8-Pin HSMT-8AG RQ3P120BKFRATCB

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包裝方式:
RS庫存編號:
687-380
製造零件編號:
RQ3P120BKFRATCB
製造商:
ROHM
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品牌

ROHM

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Drain Source Voltage Vds

100V

Series

RQ3P120BKFRA

Package Type

HSMT-8AG

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

58mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

40W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

6.9nC

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Length

3.30mm

Width

300 mm

Height

0.9mm

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

COO (Country of Origin):
JP
The ROHM N channel power MOSFET designed for efficient energy management in various applications. Capable of withstanding drain-source voltages of up to 100V and continuous current ratings of ±12A, this MOSFET excels in both power density and thermal resistance. The compact HSMT8AG package significantly reduces PCB space requirements by 64%, making it an ideal choice for modern electronic designs that demand reliability and efficiency. With AEC-Q101 qualification, it ensures robust operation in automotive applications, serving a wide range of use cases from ADAS to lighting solutions.

Small high-powered package optimises space on PCBs by 64%

High mounting reliability achieved through innovative terminal and plating treatments

AEC Q101 qualification ensures reliability in automotive applications

Designed to handle a maximum power dissipation of 40W for effective thermal management

Low on-state resistance of 58mΩ enhances efficiency and performance

Robust gate-source voltage tolerance of ±20V expands integration possibilities

Avalanche rating of 8A and energy dissipation of 5.2mJ provides extra protection during operation

Highly reliable operation across a temperature range of -55 to +150°C

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