Vishay SiS N-Channel MOSFET, 64 A, 80 V Enhancement, 8-Pin PowerPAK 1212 SISD5806DN-T1-UE3
- RS庫存編號:
- 735-136
- 製造零件編號:
- SISD5806DN-T1-UE3
- 製造商:
- Vishay
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HK$18.20
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|---|---|
| 1 - 9 | HK$18.20 |
| 10 - 24 | HK$11.80 |
| 25 - 99 | HK$11.30 |
| 100 - 499 | HK$11.00 |
| 500 + | HK$10.70 |
* 參考價格
- RS庫存編號:
- 735-136
- 製造零件編號:
- SISD5806DN-T1-UE3
- 製造商:
- Vishay
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | SiS | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0069Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 57W | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 80V | |
| Maximum Operating Temperature | 150°C | |
| Length | 4mm | |
| Width | 4mm | |
| Standards/Approvals | RoHS | |
| Height | 1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series SiS | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0069Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 57W | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 80V | ||
Maximum Operating Temperature 150°C | ||
Length 4mm | ||
Width 4mm | ||
Standards/Approvals RoHS | ||
Height 1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Vishay N-Channel MOSFET rated for 80V drain-source voltage, specifically engineered for low-loss operation in AI power server solutions and high-efficiency DC/DC converters.
64A continuous drain current at TC=25°C
57W maximum power dissipation
33nC maximum total gate charge
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