Vishay SQ3583CEV N channel, P-Channel MOSFET, 4.7 A, 20 V Enhancement, 6-Pin TSOP-6 SQ3583CEV-T1_GE3
- RS庫存編號:
- 736-343
- 製造零件編號:
- SQ3583CEV-T1_GE3
- 製造商:
- Vishay
N
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HK$4.36
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- 從 2026年12月03日 發貨
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|---|---|
| 1 - 24 | HK$4.36 |
| 25 - 99 | HK$2.91 |
| 100 + | HK$1.45 |
* 參考價格
- RS庫存編號:
- 736-343
- 製造零件編號:
- SQ3583CEV-T1_GE3
- 製造商:
- Vishay
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N channel, P-Channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.7A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | TSOP-6 | |
| Series | SQ3583CEV | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.077Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.67W | |
| Typical Gate Charge Qg @ Vgs | 6nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N channel, P-Channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.7A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type TSOP-6 | ||
Series SQ3583CEV | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.077Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.67W | ||
Typical Gate Charge Qg @ Vgs 6nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 12V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- DE
The Vishay Dual MOSFET designed for high-reliability applications. This component utilizes TrenchFET technology to provide efficient power management in a Compact TSOP-6 package.
Qualified for automotive use according to AEC-Q101 standards
Undergoes 100 % Rg and UIS testing to ensure robust performance
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