Vishay SI2324BDS N-Channel MOSFET, 1.9 A, 100 V Enhancement, 3-Pin SOT-23 SI2324BDS-T1-GE3
- RS庫存編號:
- 736-344
- 製造零件編號:
- SI2324BDS-T1-GE3
- 製造商:
- Vishay
N
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|---|---|
| 1 - 24 | HK$2.60 |
| 25 - 99 | HK$2.50 |
| 100 + | HK$2.40 |
* 參考價格
- RS庫存編號:
- 736-344
- 製造零件編號:
- SI2324BDS-T1-GE3
- 製造商:
- Vishay
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 1.9A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-23 (TO-236AB) | |
| Series | SI2324BDS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.21Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 1.86nC | |
| Maximum Power Dissipation Pd | 1.7W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 1.9A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-23 (TO-236AB) | ||
Series SI2324BDS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.21Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 1.86nC | ||
Maximum Power Dissipation Pd 1.7W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay N-Channel MOSFET designed to optimise power management applications, featuring a robust 100V drain-source voltage rating and enhanced thermal characteristics for efficient operation.
The high thermal resistance performance enhances reliability
Designed for LED backlighting and DC/DC converter applications
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