Infineon AIMBG75R N-Channel MOSFET, 64 A, 750 V, 7-Pin PG-TO263-7 AIMBG75R040M2HXTMA1
- RS庫存編號:
- 762-869
- 製造零件編號:
- AIMBG75R040M2HXTMA1
- 製造商:
- Infineon
可享批量折扣
查看批量定價選項小計（1 件）*
HK$196.90
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年10月27日 發貨
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單位 | 每單位 |
|---|---|
| 1 - 9 | HK$196.90 |
| 10 - 24 | HK$177.20 |
| 25 + | HK$145.70 |
* 參考價格
- RS庫存編號:
- 762-869
- 製造零件編號:
- AIMBG75R040M2HXTMA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Series | AIMBG75R | |
| Package Type | PG-TO263-7 | |
| Mount Type | SMD | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 31mΩ | |
| Maximum Power Dissipation Pd | 234W | |
| Maximum Gate Source Voltage Vgs | 23V | |
| Typical Gate Charge Qg @ Vgs | 169nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 15mm | |
| Standards/Approvals | RoHS | |
| Length | 9.8mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 750V | ||
Series AIMBG75R | ||
Package Type PG-TO263-7 | ||
Mount Type SMD | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 31mΩ | ||
Maximum Power Dissipation Pd 234W | ||
Maximum Gate Source Voltage Vgs 23V | ||
Typical Gate Charge Qg @ Vgs 169nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 15mm | ||
Standards/Approvals RoHS | ||
Length 9.8mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
The Infineon MOSFET is a high-performance power device designed for automotive applications, delivering efficient switching capabilities and robust reliability across demanding environments.
Robust 750V technology ensures high reliability and performance
Designed with enhanced thermal dissipation to improve system efficiency
Features exceptional switching characteristics for increased operational frequency
Vastly reduced switching losses through innovative gate control mechanisms
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