Infineon CoolSiC N-Channel Power MOSFET, 28 A, 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R075M2HXTMA1
- RS庫存編號:
- 762-918
- 製造零件編號:
- IMBG65R075M2HXTMA1
- 製造商:
- Infineon
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HK$47.70
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單位 | 每單位 |
|---|---|
| 1 - 9 | HK$47.70 |
| 10 - 49 | HK$38.70 |
| 50 - 99 | HK$29.60 |
| 100 + | HK$29.00 |
* 參考價格
- RS庫存編號:
- 762-918
- 製造零件編號:
- IMBG65R075M2HXTMA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 28A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-TO263-7 | |
| Series | CoolSiC | |
| Mount Type | Through Hole | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 95mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Maximum Power Dissipation Pd | 124W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.5mm | |
| Width | 10.2mm | |
| Standards/Approvals | RoHS | |
| Length | 15mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 28A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-TO263-7 | ||
Series CoolSiC | ||
Mount Type Through Hole | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 95mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Maximum Power Dissipation Pd 124W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Operating Temperature 175°C | ||
Height 4.5mm | ||
Width 10.2mm | ||
Standards/Approvals RoHS | ||
Length 15mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolSiC MOSFET delivers unparalleled performance, superior reliability, and great ease of use. It enables cost effective, highly efficient, and simplified designs to fulfill the ever‑growing system and market needs.
Ultra‑low switching losses
Enhances system robustness and reliability
Facilitates great ease of use and integration
Reduces the size, weight and bill of materials of the systems
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