Infineon CoolSiC N-Channel Power MOSFET, 64 A, 650 V, 4-Pin Tape & Reel IPQC65R040CFD7XTMA1
- RS庫存編號:
- 762-940
- 製造零件編號:
- IPQC65R040CFD7XTMA1
- 製造商:
- Infineon
可享批量折扣
查看批量定價選項小計（1 件）*
HK$80.40
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年1月25日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 9 | HK$80.40 |
| 10 - 49 | HK$65.10 |
| 50 - 99 | HK$49.90 |
| 100 + | HK$48.90 |
* 參考價格
- RS庫存編號:
- 762-940
- 製造零件編號:
- IPQC65R040CFD7XTMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | Tape & Reel | |
| Series | CoolSiC | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 97nC | |
| Maximum Power Dissipation Pd | 357W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.35mm | |
| Standards/Approvals | RoHS | |
| Width | 15.1mm | |
| Length | 8.2mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type Tape & Reel | ||
Series CoolSiC | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 97nC | ||
Maximum Power Dissipation Pd 357W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 2.35mm | ||
Standards/Approvals RoHS | ||
Width 15.1mm | ||
Length 8.2mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- DE
The Infineon 650 V CoolMOS CFD7A is latest generation of market leading automotive qualified high voltage CoolMOS MOSFETs. The new CoolMOS CFD7A series provides an integrated fast body diode and can be used for PFC and resonant switching technologies.
Latest 650 V automotive qualified technology
High quality and reliability
100% avalanche tested
Lower switching losses
相关链接
- Infineon CoolSiC N channel-Channel Power MOSFET 650 V, 4-Pin Tape & Reel IPQC65R017CFD7XTMA1
- Infineon CoolSiC N channel-Channel Power MOSFET 650 V Enhancement, 3-Pin TO-247 IMW65R075M2HXKSA1
- Infineon CoolSiC N channel-Channel Power MOSFET 650 V Enhancement, 4-Pin TO-LL IMTA65R075M2HXTMA1
- Infineon CoolSiC N channel-Channel Power MOSFET 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R075M2HXTMA1
- Infineon CoolSiC N channel-Channel Power MOSFET 650 V Enhancement, 16-Pin PG-HDSOP-16 IMLT65R075M2HXTMA1
- Infineon CoolSiC N channel-Channel Power MOSFET 650 V Enhancement, 4-Pin TO-247-4 IMZA65R075M2HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247