Infineon OptiMOS N channel-Channel Power MOSFET, 44 A, 200 V Enhancement, 8-Pin SuperSO8 5 x 6 ISC300N20NM6ATMA1

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RS庫存編號:
762-982
製造零件編號:
ISC300N20NM6ATMA1
製造商:
Infineon
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品牌

Infineon

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

44A

Maximum Drain Source Voltage Vds

200V

Series

OptiMOS

Package Type

SuperSO8 5 x 6

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

30mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

17nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

136W

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Height

1.2mm

Length

6.1mm

Width

5.35mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Infineon OptiMOS 6 Power Transistor is a 200 V N-channel device designed for efficient power applications. It features low on-resistance, and minimal reverse recovery charge (Qrr). Additionally, it meets RoHS standards, is halogen-free, and is classified as MSL 1 according to J-STD-020.

100% avalanche tested

175°C operating temperature

High avalanche energy rating

Pb‑free lead plating

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