Vishay MaxSiC N-Channel MOSFET, 52 A, 1200 V N, 7-Pin TO-263-7L MXPQ120A045SE-1GE3

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  • 2027年3月29日 發貨
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RS庫存編號:
790-411
製造零件編號:
MXPQ120A045SE-1GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

52A

Maximum Drain Source Voltage Vds

1200V

Package Type

TO-263-7L

Series

MaxSiC

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

N

Typical Gate Charge Qg @ Vgs

82nC

Maximum Power Dissipation Pd

268W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

4.9V

Maximum Gate Source Voltage Vgs

22V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Width

10.28mm

Height

4.5mm

Length

9.23mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
TW
The Vishay 1200 V N-Channel SiC MOSFET is designed for demanding power applications, combining speed, reliability, and compliance. Its Advanced construction ensures efficient performance while meeting strict automotive and environmental standards.

AEC-Q101 qualified for automotive-grade reliability

Fast switching speed for improved efficiency

Halogen free for safer and eco-friendly use

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