Vishay SIR N channel-Channel Single MOSFETs, 203 A, 100 V Enhancement Mode, 8-Pin P SIRS5100EPW-T1-RE3

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HK$25.91

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  • 2027年9月13日 發貨
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RS庫存編號:
829-344
製造零件編號:
SIRS5100EPW-T1-RE3
製造商:
Vishay
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品牌

Vishay

Product Type

Single MOSFETs

Channel Type

N channel

Maximum Continuous Drain Current Id

203A

Maximum Drain Source Voltage Vds

100V

Series

SIR

Package Type

P

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0027Ω

Channel Mode

Enhancement Mode

Maximum Power Dissipation Pd

205W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

32nC

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Width

5.15mm

Length

6.15mm

Height

1.04mm

Automotive Standard

No

COO (Country of Origin):
DE
The Vishay power MOSFET delivers high performance for applications demanding efficient switching. With its Advanced design, it enables significant reductions in power loss and enhanced overall thermal management.

Provides a drain-source voltage rating of 100 V, ensuring reliable operation

Achieves a low on-state resistance, which minimises power loss during conduction

Offers a continuous drain current of up to 203 A, suitable for high-power demands

Features a Pb-free and halogen-free construction for compliance with environmental regulations

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