onsemi BSS N channel-Channel MOSFET, 0.22 A, 50 V, 3-Pin SOT-23-3 BSS138-G
- RS庫存編號:
- 838-663
- 製造零件編號:
- BSS138-G
- 製造商:
- onsemi
N
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計(1 組,共 50 件)*
HK$74.90
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年1月11日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每膠帶* |
|---|---|---|
| 50 - 450 | HK$1.498 | HK$74.90 |
| 500 - 2450 | HK$1.212 | HK$60.60 |
| 2500 - 4950 | HK$0.93 | HK$46.50 |
| 5000 + | HK$0.912 | HK$45.60 |
* 參考價格
- RS庫存編號:
- 838-663
- 製造零件編號:
- BSS138-G
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 0.22A | |
| Maximum Drain Source Voltage Vds | 50V | |
| Series | BSS | |
| Package Type | SOT-23-3 | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.4V | |
| Typical Gate Charge Qg @ Vgs | 2.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.36W | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.3mm | |
| Height | 1mm | |
| Length | 2.9mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 0.22A | ||
Maximum Drain Source Voltage Vds 50V | ||
Series BSS | ||
Package Type SOT-23-3 | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.4V | ||
Typical Gate Charge Qg @ Vgs 2.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.36W | ||
Maximum Operating Temperature 150°C | ||
Width 1.3mm | ||
Height 1mm | ||
Length 2.9mm | ||
Automotive Standard No | ||
The onsemi N-Channel enhancement mode field effect transistor is designed for efficient performance in low voltage applications. It delivers reliable switching capabilities and minimal on-state resistance for a variety of electronic uses.
Supports a continuous drain current of 0.22 A and a pulsed drain current of 0.88 A
Exhibits a low on-resistance of 3.5 Ω at gate voltage of 10 V
Operates effectively within a temperature range of -55°C to +150°C
相关链接
- onsemi BSS138 Type N-Channel MOSFET 50 V Enhancement, 3-Pin SOT-23 BSS138
- onsemi BSS138 Type N-Channel MOSFET 50 V Enhancement, 3-Pin SOT-23
- DiodesZetex BSS138 Type N-Channel MOSFET 50 V Enhancement, 3-Pin SOT-23 BSS138-7-F
- DiodesZetex BSS138 Type N-Channel MOSFET 50 V Enhancement, 3-Pin SOT-23
- onsemi FDV3 Type N-Channel Single MOSFETs 25 V N, 3-Pin SOT-23-3 FDV301N
- Infineon BSS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon BSS Type N-Channel MOSFET 250 V Depletion, 3-Pin SOT-23
- Infineon BSS Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
