STMicroelectronics STB Series N-Channel MOSFET, 56 A, 250 V Enhancement Mode, 3-Pin TO-263 STB25N018M9
- RS庫存編號:
- 839-144
- 製造零件編號:
- STB25N018M9
- 製造商:
- STMicroelectronics
N
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* 參考價格
- RS庫存編號:
- 839-144
- 製造零件編號:
- STB25N018M9
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 56A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | STB Series | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Channel Mode | Enhancement Mode | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 85nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 320W | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.5mm | |
| Length | 10.3mm | |
| Width | 10mm | |
| Standards/Approvals | ROHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 56A | ||
Maximum Drain Source Voltage Vds 250V | ||
Series STB Series | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Channel Mode Enhancement Mode | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 85nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 320W | ||
Maximum Operating Temperature 150°C | ||
Height 4.5mm | ||
Length 10.3mm | ||
Width 10mm | ||
Standards/Approvals ROHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET is an N-channel super-junction component built on Advanced MDmesh M9 technology. It enables smaller more Compact layouts without compromising thermal capacity.
D2PAK surface-mount assembly package style
Silicon-based multi-drain manufacturing process
Low gate charge with outstanding efficiency
Enhanced dv/dt capability and avalanche tested
相关链接
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