Vishay TrenchFET N channel-Channel Single MOSFETs, 352 A, 80 V Enhancement Mode, 8-Pin PowerPAK (8x8LR) SQJQ580ER-T1_GE3
- RS庫存編號:
- 847-933
- 製造零件編號:
- SQJQ580ER-T1_GE3
- 製造商:
- Vishay
N
可享批量折扣
查看批量定價選項小計（1 組，共 1 件）*
HK$41.88
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年4月12日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
膠帶 | 每膠帶 |
|---|---|
| 1 - 9 | HK$41.88 |
| 10 - 49 | HK$26.02 |
| 50 - 99 | HK$15.75 |
| 100 + | HK$15.41 |
* 參考價格
- RS庫存編號:
- 847-933
- 製造零件編號:
- SQJQ580ER-T1_GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 352A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | TrenchFET | |
| Package Type | PowerPAK (8x8LR) | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00144Ω | |
| Channel Mode | Enhancement Mode | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Typical Gate Charge Qg @ Vgs | 93nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 8mm | |
| Standards/Approvals | RoHS3 Compliant | |
| Width | 8mm | |
| Height | 1.60mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Single MOSFETs | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 352A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series TrenchFET | ||
Package Type PowerPAK (8x8LR) | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00144Ω | ||
Channel Mode Enhancement Mode | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 12V | ||
Typical Gate Charge Qg @ Vgs 93nC | ||
Maximum Operating Temperature 150°C | ||
Length 8mm | ||
Standards/Approvals RoHS3 Compliant | ||
Width 8mm | ||
Height 1.60mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay automotive N-Channel power MOSFET delivers efficient high-performance switching for a variety of demanding applications, ensuring reliability under extreme conditions.
TrenchFET Gen V technology ensures enhanced efficiency and performance
AEC-Q101 qualified for automotive applications, assuring compliance with industry standards
Continuous drain current rated at 352 A under standard conditions
Thin profile of 1.9 mm maximises space efficiency in designs
100% tested for R and UIS, ensuring reliable operation
相关链接
- Vishay TrenchFET N channel-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ118ER-T1_GE3
- Vishay TrenchFET N channel-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ160ER-T1_GE3
- Vishay TrenchFET N channel-Channel MOSFET 150 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ570ER-T1_GE3
- Vishay TrenchFET P-Channel MOSFET -40 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ141ELR-T1_GE3
- Vishay Type N-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ184E-T1_GE3
- Vishay N-Channel 40 V Type N-Channel MOSFET 40 V, 8-Pin PowerPAK (8x8LR) SQJQ144AER-T1_GE3
- Vishay N-Channel 40 V Type N-Channel MOSFET 40 V, 8-Pin PowerPAK (8x8LR) SQJQ148ER-T1_GE3
- Vishay SQJQ184ER Type N-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ184ER-T1_GE3