Vishay S N-Channel MOSFET, 28 A, 650 V N, 8-Pin PowerPAK 10 x 12 SIHK135N65S-T1-GE3
- RS庫存編號:
- 878-898
- 製造零件編號:
- SIHK135N65S-T1-GE3
- 製造商:
- Vishay
N
可享批量折扣
查看批量定價選項小計（1 件, 每膠帶1個）*
HK$20.55
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年2月23日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
膠帶 | 每膠帶 |
|---|---|
| 1 - 9 | HK$20.55 |
| 10 - 24 | HK$13.40 |
| 25 - 99 | HK$7.93 |
| 100 - 499 | HK$7.71 |
| 500 + | HK$7.59 |
* 參考價格
- RS庫存編號:
- 878-898
- 製造零件編號:
- SIHK135N65S-T1-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 28A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | S | |
| Package Type | PowerPAK 10 x 12 | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.121Ω | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 278W | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 28A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series S | ||
Package Type PowerPAK 10 x 12 | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.121Ω | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 278W | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay Power MOSFET designed to manage switching and conduction efficiently, making it an essential component for various power supply applications.
Latest generation SF series technology, ensuring optimal performance
Low figure of merit (FOM) for enhanced energy efficiency
Avalanche energy rated, offering improved reliability under stress
Single Pulse avalanche energy capacity, catering to demanding applications
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