STMicroelectronics Enhancement Mode STL N-Channel Power MOSFET, 181 A, 80 V N, 8-Pin PowerFLAT STL180N8F8
- RS庫存編號:
- 898-600
- 製造零件編號:
- STL180N8F8
- 製造商:
- STMicroelectronics
N
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HK$16.30
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- 從 2027年2月17日 發貨
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| 100 - 499 | HK$11.06 |
| 500 + | HK$9.27 |
* 參考價格
- RS庫存編號:
- 898-600
- 製造零件編號:
- STL180N8F8
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 181A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | STL | |
| Package Type | PowerFLAT | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 85nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 167W | |
| Transistor Configuration | Enhancement Mode | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | ECOPACK2 | |
| Width | 5mm | |
| Height | 1mm | |
| Length | 5.8mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 181A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series STL | ||
Package Type PowerFLAT | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 85nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 167W | ||
Transistor Configuration Enhancement Mode | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals ECOPACK2 | ||
Width 5mm | ||
Height 1mm | ||
Length 5.8mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure.It ensures a state-of-the-art of figure of merit for very low on-state resistance while reducing internal capacitances and gate charge for Faster and more efficient switching.
MSL1 grade
100% avalanche tested
Low gate charge
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