Vishay E Type N-Channel MOSFET, 25 A, 600 V Enhancement, 4-Pin PowerPAK SIHH26N60E-T1-GE3

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包裝方式：
RS庫存編號:
124-2251
製造零件編號:
SIHH26N60E-T1-GE3
製造商:
Vishay
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品牌

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

600V

Series

E

Package Type

PowerPAK

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

135mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

77nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

202W

Maximum Operating Temperature

150°C

Height

1mm

Standards/Approvals

No

Length

8.1mm

Automotive Standard

No

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor


The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).

Features


Low figure-of-merit (FOM) RDS(on) x Qg

Low input capacitance (Ciss)

Low on-resistance (RDS(on))

Ultra-low gate charge (Qg)

Fast switching

Reduced switching and conduction losses

MOSFET Transistors, Vishay Semiconductor


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