ROHM RS1G120MN N-Channel MOSFET, 34 A, 40 V Enhancement, 8-Pin HSOP-8 RS1G120MNTB
- RS庫存編號:
- 124-6811
- 製造零件編號:
- RS1G120MNTB
- 製造商:
- ROHM
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 20 件）*
HK$90.10
訂單超過 HK$250.00 免費送貨
最後的 RS 庫存
- 最終 1,600 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 80 | HK$4.505 | HK$90.10 |
| 100 - 180 | HK$4.425 | HK$88.50 |
| 200 - 480 | HK$4.35 | HK$87.00 |
| 500 - 980 | HK$4.27 | HK$85.40 |
| 1000 + | HK$4.195 | HK$83.90 |
* 參考價格
- RS庫存編號:
- 124-6811
- 製造零件編號:
- RS1G120MNTB
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 34A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | RS1G120MN | |
| Package Type | HSOP-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 20.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 25W | |
| Typical Gate Charge Qg @ Vgs | 9.4nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 5.8mm | |
| Length | 5mm | |
| Height | 1mm | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 34A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series RS1G120MN | ||
Package Type HSOP-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 20.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 25W | ||
Typical Gate Charge Qg @ Vgs 9.4nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 5.8mm | ||
Length 5mm | ||
Height 1mm | ||
- COO (Country of Origin):
- TH
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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