Toshiba DTMOSIV N-Channel MOSFET, 15.8 A, 600 V Enhancement, 3-Pin TO-247 TK16N60W5,S1VF(S
- RS庫存編號:
- 125-0543
- 製造零件編號:
- TK16N60W5,S1VF(S
- 製造商:
- Toshiba
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可享批量折扣
查看批量定價選項小計（1 包，共 5 件）*
HK$122.30
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 20 | HK$24.46 | HK$122.30 |
| 25 - 45 | HK$23.84 | HK$119.20 |
| 50 - 120 | HK$23.26 | HK$116.30 |
| 125 - 245 | HK$22.66 | HK$113.30 |
| 250 + | HK$22.12 | HK$110.60 |
* 參考價格
- RS庫存編號:
- 125-0543
- 製造零件編號:
- TK16N60W5,S1VF(S
- 製造商:
- Toshiba
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Toshiba | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 15.8A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | DTMOSIV | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 230mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.7V | |
| Maximum Power Dissipation Pd | 130W | |
| Maximum Gate Source Voltage Vgs | -30V, +30V | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 20.95mm | |
| Width | 5.02mm | |
| Length | 15.94mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Toshiba | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 15.8A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series DTMOSIV | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 230mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.7V | ||
Maximum Power Dissipation Pd 130W | ||
Maximum Gate Source Voltage Vgs -30V, +30V | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 20.95mm | ||
Width 5.02mm | ||
Length 15.94mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET Transistors, Toshiba
相关链接
- Toshiba DTMOSIV N-Channel MOSFET 600 V EnhancementS1VF(S
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