Toshiba DTMOSIV Type N-Channel MOSFET, 30.8 A, 600 V Enhancement, 3-Pin TO-220 TK31E60X,S1X(S
- RS庫存編號:
- 125-0563
- 製造零件編號:
- TK31E60X,S1X(S
- 製造商:
- Toshiba
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查看批量定價選項小計（1 包，共 2 件）*
HK$64.30
訂單超過 HK$250.00 免費送貨
有庫存
- 加上 2 件從 2026年6月01日 起發貨
- 加上 24 件從 2026年6月08日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | HK$32.15 | HK$64.30 |
| 10 - 18 | HK$31.35 | HK$62.70 |
| 20 - 48 | HK$30.55 | HK$61.10 |
| 50 - 98 | HK$29.80 | HK$59.60 |
| 100 + | HK$29.05 | HK$58.10 |
* 參考價格
- RS庫存編號:
- 125-0563
- 製造零件編號:
- TK31E60X,S1X(S
- 製造商:
- Toshiba
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30.8A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | DTMOSIV | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 88mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.7V | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Maximum Power Dissipation Pd | 230W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 15.1mm | |
| Length | 10.16mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30.8A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series DTMOSIV | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 88mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.7V | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Maximum Power Dissipation Pd 230W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 15.1mm | ||
Length 10.16mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
相关链接
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