Infineon OptiMOS 3 N-Channel Power Transistor, 50 A, 30 V Enhancement, 3-Pin TO-220 IPP055N03LGXKSA1
- RS庫存編號:
- 130-0923
- 製造零件編號:
- IPP055N03LGXKSA1
- 製造商:
- Infineon
可享批量折扣
查看批量定價選項小計（1 包，共 10 件）*
HK$101.60
訂單超過 HK$250.00 免費送貨
最後的 RS 庫存
- 最終 70 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 10 | HK$10.16 | HK$101.60 |
| 20 - 20 | HK$9.90 | HK$99.00 |
| 30 + | HK$9.75 | HK$97.50 |
* 參考價格
- RS庫存編號:
- 130-0923
- 製造零件編號:
- IPP055N03LGXKSA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS 3 | |
| Package Type | TO-220 | |
| Mount Type | Surface, Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 68W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC (J-STD20, JESD22), RoHS | |
| Height | 15.95mm | |
| Width | 4.57mm | |
| Length | 10.36mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS 3 | ||
Package Type TO-220 | ||
Mount Type Surface, Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 68W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, JEDEC (J-STD20, JESD22), RoHS | ||
Height 15.95mm | ||
Width 4.57mm | ||
Length 10.36mm | ||
Automotive Standard No | ||
Infineon OptiMOS™ 3 Series MOSFET, 50A Maximum Continuous Drain Current, 30V Maximum Drain Source Voltage - IPP055N03LGXKSA1
This high-performance MOSFET is designed for various electronic applications, including power management systems. It features a through-hole TO-220 package, measuring 10.36mm x 4.57mm x 15.95mm. Specifically suited for automation and electrical industries, this device ensures optimal performance under rigorous conditions.
Features & Benefits
• Fast switching capability enhances efficiency in power applications
• Low drain-source on-resistance minimises power loss during operation
• Avalanche rated for improved durability under stress
• Logic-level N-channel design enables compatibility with low-voltage drives
• Maximum continuous drain current of 50A supports demanding tasks
Applications
• Used for DC/DC conversion in power supplies
• Ideal for synchronous rectification in high-efficiency converters
• Facilitates motor control in industrial automation systems
• Used in battery management systems for electric vehicles
• Suitable for both consumer electronics and renewable energy
What is the significance of its low RDS(on) in power applications?
A low RDS(on) reduces the on-state voltage drop, which directly lowers heat generation and improves efficiency. This is Crucial for maintaining performance in high-current applications, ensuring that less energy is wasted as heat.
How does this MOSFET handle high temperatures during operation?
With a maximum operating temperature of +175 °C, it has robust thermal characteristics, allowing it to function reliably in challenging environments without compromising performance.
What type of applications can benefit from the enhancement mode transistor design?
Enhancement mode transistors are widely used in switching applications as they provide excellent control over the current flow, making them Ideal for efficient power management solutions. This includes their use in power supplies and DC motors.
相关链接
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