N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIR158DP-T1-RE3
- RS庫存編號:
- 134-9157
- 製造零件編號:
- SIR158DP-T1-RE3
- 製造商:
- Vishay
999999999 現貨庫存，次日發貨。
單價 个（每带 3000 ）
HK$11.307
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | HK$11.307 | HK$33,921.00 |
| 15000 + | HK$10.176 | HK$30,528.00 |
* 參考價格
- RS庫存編號:
- 134-9157
- 製造零件編號:
- SIR158DP-T1-RE3
- 製造商:
- Vishay
法例與合規
產品詳細資訊
N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
規格
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 60 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | PowerPAK SO-8 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 2.3 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 83 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Length | 6.25mm |
| Width | 5.26mm |
| Typical Gate Charge @ Vgs | 87 nC @ 10 V |
| Forward Diode Voltage | 1.1V |
| Height | 1.12mm |
| Minimum Operating Temperature | -55 °C |