Vishay TrenchFET Type N-Channel MOSFET, 100 A, 80 V Enhancement, 8-Pin SO-8
- RS庫存編號:
- 134-9161
- 製造零件編號:
- SIR680DP-T1-RE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 3000 件）*
HK$34,689.00
訂單超過 HK$250.00 免費送貨
有庫存
- 3,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | HK$11.563 | HK$34,689.00 |
| 6000 - 9000 | HK$11.331 | HK$33,993.00 |
| 12000 + | HK$11.105 | HK$33,315.00 |
* 參考價格
- RS庫存編號:
- 134-9161
- 製造零件編號:
- SIR680DP-T1-RE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 104W | |
| Typical Gate Charge Qg @ Vgs | 69.5nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.12mm | |
| Length | 6.25mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 104W | ||
Typical Gate Charge Qg @ Vgs 69.5nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.12mm | ||
Length 6.25mm | ||
Automotive Standard No | ||
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
相关链接
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