Vishay TrenchFET N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8 SIRA90DP-T1-RE3
- RS庫存編號:
- 134-9698
- 製造零件編號:
- SIRA90DP-T1-RE3
- 製造商:
- Vishay
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查看批量定價選項小計（1 包，共 5 件）*
HK$94.90
訂單超過 HK$250.00 免費送貨
有庫存
- 加上 5,990 件從 2026年10月19日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 745 | HK$18.98 | HK$94.90 |
| 750 - 1495 | HK$18.52 | HK$92.60 |
| 1500 + | HK$18.20 | HK$91.00 |
* 參考價格
- RS庫存編號:
- 134-9698
- 製造零件編號:
- SIRA90DP-T1-RE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.15mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 104W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 102nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.12mm | |
| Length | 6.25mm | |
| Width | 5.26mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.15mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 104W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 102nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Height 1.12mm | ||
Length 6.25mm | ||
Width 5.26mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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