Vishay TrenchFET N-Channel MOSFET, 65 A, 100 V Enhancement, 8-Pin SO-8 SIR668DP-T1-RE3
- RS庫存編號:
- 134-9725
- 製造零件編號:
- SIR668DP-T1-RE3
- 製造商:
- Vishay
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HK$52.00
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單位 | 每單位 | 每包* | 節省 |
|---|---|---|---|
| 2 - 748 | HK$26.00 | HK$52.00 | - |
| 750 - 1498 | HK$25.45 | HK$50.90 | 2% |
| 1500 + | HK$24.85 | HK$49.70 | 4% |
* 參考價格
- RS庫存編號:
- 134-9725
- 製造零件編號:
- SIR668DP-T1-RE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 65A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.05mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 104W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Typical Gate Charge Qg @ Vgs | 72nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.25mm | |
| Width | 5.26mm | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 65A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.05mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 104W | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Typical Gate Charge Qg @ Vgs 72nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.25mm | ||
Width 5.26mm | ||
Height 1.12mm | ||
Automotive Standard No | ||
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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