Vishay E Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-220

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小計(1 管,共 50 件)*

HK$1,838.10

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50 - 50HK$36.762HK$1,838.10
100 - 150HK$35.964HK$1,798.20
200 +HK$35.166HK$1,758.30

* 參考價格

RS庫存編號:
145-1911
製造零件編號:
SIHF30N60E-GE3
製造商:
Vishay
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品牌

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

85nC

Maximum Power Dissipation Pd

37W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Length

10.63mm

Height

16.12mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor


The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).

Features


Low figure-of-merit (FOM) RDS(on) x Qg

Low input capacitance (Ciss)

Low on-resistance (RDS(on))

Ultra-low gate charge (Qg)

Fast switching

Reduced switching and conduction losses

MOSFET Transistors, Vishay Semiconductor


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