N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-220FP Vishay SIHF30N60E-GE3

RS庫存編號:: 145-1911
製造零件編號:: SIHF30N60E-GE3
製造商:: Vishay

N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-220FP Vishay SIHF30N60E-GE3

此圖片僅供參考，請參閲產品詳細資訊及規格

914 現貨庫存，可於3工作日發貨。

單價毎管：50 个

HK$33.345

單位	每單位	Per Tube*
50 - 50	HK$33.345	HK$1,667.25
100 - 150	HK$32.62	HK$1,631.00
200 +	HK$31.895	HK$1,594.75

* 參考價格

RS庫存編號:: 145-1911
製造零件編號:: SIHF30N60E-GE3
製造商:: Vishay

產品概覽和技術數據資料表

法例與合規

COO (Country of Origin):: CN

產品詳細資訊

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor

The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).

Features

Low figure-of-merit (FOM) RDS(on) x Qg
Low input capacitance (Ciss)
Low on-resistance (RDS(on))
Ultra-low gate charge (Qg)
Fast switching
Reduced switching and conduction losses

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Vishay Semiconductor

規格

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	29 A
Maximum Drain Source Voltage	600 V
Series	E Series
Package Type	TO-220FP
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	125 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	37 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	10.63mm
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	85 nC @ 10 V
Transistor Material	Si
Width	4.83mm
Minimum Operating Temperature	-55 °C
Height	16.12mm