Dual P-Channel MOSFET, 1.1 A, 20 V, 6-Pin SOT-363 Vishay SI1967DH-T1-GE3
- RS庫存編號:
- 145-2681
- 製造零件編號:
- SI1967DH-T1-GE3
- 製造商:
- Vishay
1700 現貨庫存，可於3工作日發貨。
單價 个（每带 3000 ）
HK$1.157
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | HK$1.157 | HK$3,471.00 |
| 15000 + | HK$1.134 | HK$3,402.00 |
* 參考價格
- RS庫存編號:
- 145-2681
- 製造零件編號:
- SI1967DH-T1-GE3
- 製造商:
- Vishay
法例與合規
- COO (Country of Origin):
- CN
產品詳細資訊
Dual P-Channel MOSFET, Vishay Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
規格
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 1.1 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | SOT-363 |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 790 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.4V |
| Maximum Power Dissipation | 1.25 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Number of Elements per Chip | 2 |
| Maximum Operating Temperature | +150 °C |
| Length | 2.2mm |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 2.6 nC @ 8 V |
| Width | 1.35mm |
| Minimum Operating Temperature | -55 °C |
| Height | 1mm |