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MOSFETs
Dual P-Channel MOSFET, 1.1 A, 20 V, 6-Pin SOT-363 Vishay SI1967DH-T1-GE3
RS庫存編號:
812-3108
製造零件編號:
SI1967DH-T1-GE3
製造商:
Vishay
產品概覽和技術數據資料表
此圖片僅供參考,請參閲產品詳細資訊及規格
查看所有MOSFETs
1700 現貨庫存,可於3工作日發貨。
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單價 个
HK$2.515
單位
每單位
Per Tape*
50 - 700
HK$2.515
HK$125.75
750 - 1450
HK$2.471
HK$123.55
1500 +
HK$2.426
HK$121.30
* 參考價格
包裝方式:
標準包裝
行業包裝
RS庫存編號:
812-3108
製造零件編號:
SI1967DH-T1-GE3
製造商:
Vishay
法例與合規
產品詳細資訊
規格
相容
符合聲明
COO (Country of Origin):
CN
Dual P-Channel MOSFET, Vishay Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
Attribute
Value
Channel Type
P
Maximum Continuous Drain Current
1.1 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
790 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Length
2.2mm
Maximum Operating Temperature
+150 °C
Width
1.35mm
Number of Elements per Chip
2
Typical Gate Charge @ Vgs
2.6 nC @ 8 V
Transistor Material
Si
Height
1mm
Minimum Operating Temperature
-55 °C