Vishay Isolated TrenchFET 2 Type P, Type P-Channel MOSFET, 135 mA, 60 V Enhancement, 6-Pin SC-89-6 SI1025X-T1-GE3
- RS庫存編號:
- 165-6899
- 製造零件編號:
- SI1025X-T1-GE3
- 製造商:
- Vishay
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- RS庫存編號:
- 165-6899
- 製造零件編號:
- SI1025X-T1-GE3
- 製造商:
- Vishay
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P, Type P | |
| Maximum Continuous Drain Current Id | 135mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SC-89-6 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 250mW | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1.7nC | |
| Forward Voltage Vf | -1.4V | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.2mm | |
| Standards/Approvals | No | |
| Height | 0.6mm | |
| Length | 1.7mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type P, Type P | ||
Maximum Continuous Drain Current Id 135mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SC-89-6 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 250mW | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1.7nC | ||
Forward Voltage Vf -1.4V | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Width 1.2mm | ||
Standards/Approvals No | ||
Height 0.6mm | ||
Length 1.7mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
Dual P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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