Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 2.3 A, 30 V Enhancement, 6-Pin TSOP SI3993CDV-T1-GE3

RS庫存編號:: 165-6919
製造零件編號:: SI3993CDV-T1-GE3
製造商:: Vishay

Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 2.3 A, 30 V Enhancement, 6-Pin TSOP SI3993CDV-T1-GE3

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RS庫存編號:: 165-6919
製造零件編號:: SI3993CDV-T1-GE3
製造商:: Vishay

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產品詳細資訊

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選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type P
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	2.3A
	Maximum Drain Source Voltage Vds	30V
	Package Type	TSOP
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	188mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	5.2nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1.4W
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Maximum Operating Temperature	+150°C
	Transistor Configuration	Isolated
	Height	1mm
	Length	3.1mm
	Standards/Approvals	No
	Width	1.7mm
	Number of Elements per Chip	2
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type P
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 2.3A
	Maximum Drain Source Voltage Vds 30V
	Package Type TSOP
	Series TrenchFET
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 188mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 5.2nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1.4W
	Maximum Gate Source Voltage Vgs -20V, +20V
	Maximum Operating Temperature +150°C
	Transistor Configuration Isolated
	Height 1mm
	Length 3.1mm
	Standards/Approvals No
	Width 1.7mm
	Number of Elements per Chip 2
	Automotive Standard No

COO (Country of Origin):: CN

Vishay TrenchFET Series Power MOSFET, 30V Drain Source Voltage, 2.3A Continuous Drain Current - SI3993CDV-T1-GE3

This power MOSFET is a surface-mount P-channel transistor designed for switching and load-management roles in compact electronic assemblies. It provides an isolated transistor configuration in a low-profile TSOP package and is intended for applications requiring moderate current handling and controlled gate drive within a 30V voltage environment.

Features and Benefits:

• P-channel enhancement mode enables simple high-side switching
• Peak continuous drain current 2.3A supports moderate loads
• Low Rds(on) at 188mΩ reduces conduction losses
• Typical gate charge 5.2nC enables fast gate transitions
• Maximum power dissipation 1.4W manages thermal load in small boards
• Six-pin surface-mount package allows compact PCB placement

Applications

• Suitable for battery-powered high-side switching circuits
• Ideal for DC load disconnect and reverse-current blocking
• Used with power-management modules in consumer devices
• Can be used for level-shifted gate control in compact assemblies

What gate drive constraints should I consider?

The device accepts up to ±20V between gate and source, so gate-drive circuitry must keep Vgs within that range to prevent gate stress.

How tolerant is it to temperature extremes during operation?

It operates across a wide temperature span from -55°C to 150°C, permitting use in environments with severe thermal variation.

How many transistor elements does the die include and what is the package pin count?

The chip integrates two elements and the package presents six pins for board connections.

What is the maximum drain-source voltage and how does that influence circuit design?

The MOSFET is rated to 30V between drain and source, so it should be used where supply rails and transient conditions remain below that threshold.