Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 6 A, 30 V Enhancement, 8-Pin SOIC SI4532CDY-T1-GE3
- RS庫存編號:
- 787-9020
- 製造零件編號:
- SI4532CDY-T1-GE3
- 製造商:
- Vishay
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可享批量折扣
小計（1 包，共 20 件）*
HK$104.00
訂單超過 HK$250.00 免費送貨
有庫存
- 4,220 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 620 | HK$5.20 | HK$104.00 |
| 640 - 1240 | HK$5.075 | HK$101.50 |
| 1260 + | HK$4.99 | HK$99.80 |
* 參考價格
- RS庫存編號:
- 787-9020
- 製造零件編號:
- SI4532CDY-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 140mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 150°C | |
| Maximum Power Dissipation Pd | 2.78W | |
| Typical Gate Charge Qg @ Vgs | 6nC | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Length | 5mm | |
| Height | 1.5mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 140mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 150°C | ||
Maximum Power Dissipation Pd 2.78W | ||
Typical Gate Charge Qg @ Vgs 6nC | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Length 5mm | ||
Height 1.5mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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