Infineon HEXFET N-Channel MOSFET, 97 A, 100 V Enhancement, 3-Pin TO-220 IRFB4410ZPBF

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RS庫存編號:
145-9198
製造零件編號:
IRFB4410ZPBF
製造商:
Infineon
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品牌

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

97A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

9mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

230W

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

-20V, +20V

Typical Gate Charge Qg @ Vgs

83nC

Maximum Operating Temperature

175°C

Height

9.02mm

Width

4.82mm

Length

10.66mm

Standards/Approvals

No

Automotive Standard

No

Infineon HEXFET Series MOSFET, 100V Maximum Drain Source Voltage, 97A Maximum Continuous Drain Current - IRFB4410ZPBF


This MOSFET is a high-power switching transistor designed for through-hole mounting in power electronics assemblies. It operates as an N-channel enhancement device capable of handling substantial continuous drain current and high drain-source voltage across a wide ambient range, making it suitable for demanding thermal environments and conventional heatsinking arrangements.

Features and Benefits:


• 100V drain-source voltage enables high-voltage switching
• 97A continuous current supports heavy-load applications
• 9 mΩ Rds(on) minimises conduction losses during operation
• 230W power dissipation allows sustained high-power use
• 83 nC typical gate charge gives predictable switching energy
• 20V gate tolerance permits robust gate-drive margins

Applications


• Suitable for industrial motor-drive inverter stages
• Ideal for high-current DC-DC converters and supplies
• Used for power switching in telecoms and server supplies
• Can be used for battery management and charging systems
• Suitable for laboratory power electronics prototyping

What package type is provided for mounting and cooling?


It is supplied in a TO-220 through-hole package that facilitates secure PCB mounting and straightforward attachment to a heatsink for thermal management.

What gate-drive considerations should I make for switching performance?


Expect a typical total gate charge of 83 nC at standard gate voltage

design gate drivers to source and sink sufficient current to meet target switching speeds while managing switching losses.

How does junction temperature range affect deployment?


The device is rated to operate from -55 °C up to 175 °C, enabling use in applications with broad ambient and junction temperature excursions provided adequate thermal design is applied.

What is the forward voltage in conduction and its implication?


The forward conduction voltage is 1.3V under specified conditions, which contributes to overall conduction loss calculations when sizing thermal and power budgets.

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