Vishay Si3476DV N-Channel MOSFET, 4.6 A, 80 V Enhancement, 6-Pin SOT-23 SI3476DV-T1-GE3
- RS庫存編號:
- 146-4442
- 製造零件編號:
- SI3476DV-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（3000 件, 每卷3000個）*
HK$4,806.00
訂單超過 HK$250.00 免費送貨
最後的 RS 庫存
- 最終 6,000 個，準備發貨
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | HK$1.602 | HK$4,806.00 |
| 15000 + | HK$1.57 | HK$4,710.00 |
* 參考價格
- RS庫存編號:
- 146-4442
- 製造零件編號:
- SI3476DV-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.6A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | Si3476DV | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.093Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 4.9nC | |
| Maximum Power Dissipation Pd | 3.6W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.7mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Length | 3.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.6A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series Si3476DV | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.093Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 4.9nC | ||
Maximum Power Dissipation Pd 3.6W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 1.7mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Length 3.1mm | ||
Automotive Standard No | ||
TrenchFET® Power MOSFET
Material categorization:
APPLICATIONS
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LED Backlight Switch
DC/DC Converter
Boost Converter
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