Nexperia N-Channel MOSFET, 600 mA, 20 V Enhancement, 8-Pin DFN PMDXB600UNEZ
- RS庫存編號:
- 151-3178
- 製造零件編號:
- PMDXB600UNEZ
- 製造商:
- Nexperia
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 25 件）*
HK$55.00
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年9月10日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 1225 | HK$2.20 | HK$55.00 |
| 1250 - 2475 | HK$2.144 | HK$53.60 |
| 2500 + | HK$2.108 | HK$52.70 |
* 參考價格
- RS庫存編號:
- 151-3178
- 製造零件編號:
- PMDXB600UNEZ
- 製造商:
- Nexperia
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 600mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Maximum Power Dissipation Pd | 4.03W | |
| Typical Gate Charge Qg @ Vgs | 0.4nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 1.15mm | |
| Standards/Approvals | No | |
| Width | 1.05mm | |
| Height | 0.4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Nexperia | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 600mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8V | ||
Maximum Power Dissipation Pd 4.03W | ||
Typical Gate Charge Qg @ Vgs 0.4nC | ||
Maximum Operating Temperature 150°C | ||
Length 1.15mm | ||
Standards/Approvals No | ||
Width 1.05mm | ||
Height 0.4mm | ||
Automotive Standard No | ||
N-channel MOSFETs ≤ 20 V, Get the optimum switching solutions for your portable designs, Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.
20 V, dual N-channel Trench MOSFET, Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance RDSon = 470 mΩ
相关链接
- Nexperia Type N-Channel MOSFET 20 V Enhancement, 8-Pin DFN
- Nexperia Single 1 Type N-Channel MOSFET Enhancement, 4-Pin DFN PMXB43UNEZ
- Nexperia Type N-Channel MOSFET 30 V Enhancement, 4-Pin DFN
- Nexperia Type N-Channel MOSFET 80 V Enhancement, 8-Pin DFN
- Nexperia Type N-Channel MOSFET 12 V Enhancement, 4-Pin DFN
- Nexperia Type N-Channel MOSFET 80 V Enhancement, 8-Pin DFN
- Nexperia Type N-Channel MOSFET 80 V Enhancement, 8-Pin DFN PMPB215ENEAX
- Nexperia Type N-Channel MOSFET 12 V Enhancement, 4-Pin DFN PMXB40UNEZ