Nexperia Type P-Channel MOSFET, -2.4 A, -30 V Enhancement, 4-Pin DFN PMXB120EPEZ
- RS庫存編號:
- 151-3227
- 製造零件編號:
- PMXB120EPEZ
- 製造商:
- Nexperia
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 25 件）*
HK$66.60
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年3月04日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 1225 | HK$2.664 | HK$66.60 |
| 1250 - 2475 | HK$2.596 | HK$64.90 |
| 2500 + | HK$2.56 | HK$64.00 |
* 參考價格
- RS庫存編號:
- 151-3227
- 製造零件編號:
- PMXB120EPEZ
- 製造商:
- Nexperia
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -2.4A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 187mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 6.2nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 8.33W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.05mm | |
| Length | 1.15mm | |
| Height | 0.36mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Nexperia | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -2.4A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 187mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 6.2nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 8.33W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.05mm | ||
Length 1.15mm | ||
Height 0.36mm | ||
Automotive Standard No | ||
P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.
30 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1 kV HBM
Drain-source on-state resistance RDSon = 350 mΩ
相关链接
- Nexperia Type P-Channel MOSFET -30 V Enhancement, 4-Pin DFN
- Nexperia Type P-Channel MOSFET -12 V Enhancement, 4-Pin DFN
- Nexperia Type P-Channel MOSFET -20 V Enhancement, 4-Pin DFN
- Nexperia Type P-Channel MOSFET -12 V Enhancement, 4-Pin DFN PMXB65UPEZ
- Nexperia Type P-Channel MOSFET -20 V Enhancement, 4-Pin DFN PMXB75UPEZ
- Nexperia Dual Trench MOSFET 2 Type P-Channel Trench MOSFET -20 V Enhancement, 8-Pin DFN
- Nexperia Dual Trench MOSFET 2 Type P-Channel Trench MOSFET -20 V Enhancement, 8-Pin DFN PMDXB950UPELZ
- Nexperia Single 1 Type N-Channel MOSFET Enhancement, 4-Pin DFN PMXB43UNEZ